PECVDsiliconnitridestepcoverage

由 JK Lan 著作 · 2003 · 被引用 14 次 — coverage.12,13 The ratio of gaseous reactants in the PECVD of silicon nitride films impacts step coverage.14 Various mod- els of the ...

Step coverage properties of ECR CVD silicon oxide and nitride films deposited without RF bias at 400~. Source publication. Fig. 8. Step coverage properties of ...

The film showed excellent step coverage on a structure over 90° step. Deposition Temperature : 100°C Film Thickness : 1.16 µm. Deposition Rate : 23.3 nm/min.

The dielectric layer may be deposited by CVD or PECVD. The dielectric layer may be a silicon nitride, silicon oxide, or silicon oxynitride layer, for example.

由 KS Kim 著作 · 2017 · 被引用 33 次 — The thin deposited SiNx film exhibited excellent properties in the stoichiometry, chemical bonding, stress, and step coverage. Thin film quality ...

由 CK WANG 著作 · 1994 · 被引用 4 次 — A high quality and UV-transparent plasma enhanced chemical vapor deposition (PECVD) silicon nitride film is well developed to form passivation layer.

2005年11月1日 — Less than 10% pattern-dependent microloading and greater than 95% step coverage are required for low temperature deposition of Si3N4 spacer ...

由 JY Byun 著作 · 2021 · 被引用 10 次 — The inferior step coverage of the PEALD silicon nitride deposited using the 162 MHz CCP, as compared to the ALD silicon nitride, is believed to ...